mirror of https://github.com/wolfSSL/wolfBoot.git
Documentation for T1024 DDR4 registers.
David Garske
Daniele Lacamera
parent
bf55ac1ab5
commit
f0b340068a
216
hal/nxp_t1024.c
216
hal/nxp_t1024.c
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@ -610,48 +610,240 @@ enum ifc_amask_sizes {
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/* DDR4 - 2GB */
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/* 1600 MT/s (64-bit, CL=12, ECC on) */
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/* SA[0-15]: 0000: Starting address for chip select (bank)n
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* EA[16-31]: 007F: Ending address for chip select (bank)n
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*/
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#define DDR_CS0_BNDS_VAL 0x0000007F
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#define DDR_CS1_BNDS_VAL 0x008000BF
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#define DDR_CS2_BNDS_VAL 0x0100013F
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#define DDR_CS3_BNDS_VAL 0x0140017F
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#define DDR_CS0_CONFIG_VAL 0x80010312
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/* 15=row bits, 10 column bits, 1 bank group bit, 2 logical bank bits, ODT only during writes */
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/* CS_EN [0]: 1 Chip select n enable
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* AP_EN [8]: 1 Chip select nauto-precharge enable
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* ODT_RD_CFG [9-11]: ODT for reads configuration
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* ODT_WR_CFG [13-15]: ODT for writes configuration
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* BA_BITS_CS [16-17]: Number of bank bits for SDRAM on chip selectn
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* ROW_BITS_CS[21-23]: Number of row bits for SDRAM on chip selectn
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* BG_BITS_CS [26-27]: Number of bank group bits for SDRAM on chip selectn
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* COL_BITS_CS[29-31]: Number of column bits for SDRAM on chip selectn
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*/
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#define DDR_CS0_CONFIG_VAL 0x80810312 /* was 0x80010312 */
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#define DDR_CS1_CONFIG_VAL 0x00000202
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#define DDR_CS2_CONFIG_VAL 0x00000202
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#define DDR_CS3_CONFIG_VAL 0x00010202
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/* PASR_DEC[0]: Partial array decoding
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* PASR_CFG[5-7]: Partial array self refresh config
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*/
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#define DDR_CS_CONFIG_2_VAL 0x00000000
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/* RWT [0-1]: 10: 2 clocks: Read-to-write turnaround (tRTW)
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* WRT [2-3]: 00: 0 clocks: Write-to-read turnaround
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* RRT [4-5]: 00: 0 clocks: Read-to-read turnaround
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* WWT [6-7]: 00: 0 clocks: Write-to-write turnaround
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* ACT_PD_EXIT [8-11]: 0101: 5 clocks: Active powerdown exit timing (tXP)
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* PRE_PD_EXIT [12-15]: 0100: 4 clocks: Precharge powerdown exit timing (tXP)
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* EXT_PRE_PD_EXIT[16-17]: 01: 16 clocks: Extended precharge powerdown exit timing (tXP)
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* MRS_CYC [27-31]: 01100: 12 clocks: Mode register set cycle time (tMRD, tMOD)
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*/
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#define DDR_TIMING_CFG_0_VAL 0x8055000C
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#define DDR_TIMING_CFG_1_VAL 0x2E268E44
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#define DDR_TIMING_CFG_2_VAL 0x0049111C
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#define DDR_TIMING_CFG_3_VAL 0x114C1000
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#define DDR_TIMING_CFG_4_VAL 0x00220001
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/* PRETOACT [0-3]: 0011: 3 clocks: Precharge-to-activate interval (tRP)
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* ACTTOPRE [4-7]: 1110: 14 clocks (30 total): Activate to precharge interval (tRAS)
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* ACTTORW [8-11]: 0010: 2 clocks (18 total): Activate to read/write interval for SDRAM (tRCD)
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* CASLAT [12-14]: 011: 4 clocks: MCAS_B latency from READ command
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* REFREC [16-19]: 1100: 12 clocks (240+12+8 total): Refresh recovery time (tRFC)
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* WRREC [20-23]: 1110: 14 clocks: Last data to precharge minimum interval (tWR)
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* ACTTOACT [24-27]: 0100: 4 clocks: Activate-to-activate interval (tRRD)
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* WRTORD [28-31]: 0100: 4 clocks: Last write data pair to read command issue interval (tWTR)
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*/
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#define DDR_TIMING_CFG_1_VAL 0x3E26CE44 /* was 0x2E268E44 */
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/* ADD_LAT [0-3]: 0000: 0 clocks Additive latency
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* WR_LAT [9-12]: 1001: 9 clocks Write latency
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* EXT_WR_LAT [13]: 0: 0 clocks Extended Write Latency (1=16 clocks)
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* RD_TO_PRE [15-18]: 1000: 8 clocks Read to precharge (tRTP).
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* WR_DATA_DELAY [19-22]: 1000: 1 clock delay Write command to write data strobe timing adjustment.
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* CKE_PLS [23-25]: 100: 4 clocks Minimum CKE pulse width (tCKE).
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* FOUR_ACT [26-31]: 011100: 28 Window for four activates (tFAW).
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*/
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#define DDR_TIMING_CFG_2_VAL 0x0049111C /* tried 0x00491124 */
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/* EXT_PRETOACT [3]: 1: 16 clocks: Extended precharge-to-activate interval (0=0, 1=16 clocks)
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* EXT_ACTTOPRE [6-7]: 01: 16 clocks: Extended Activate to precharge interval (tRAS)
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* EXT_ACTTORW [9]: 1: 16 clocks: Extended activate to read/write interval for SDRAM (tRCD) (ACTTORW[5])
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* EXT_REFREC [10-15]: 001111: 240 Extended refresh recovery time (tRFC).
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* EXT_CASLAT [18-19]: 01: 8 clocks Extended MCAS_B latency from READ command
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* EXT_ADD_LAT [21]: 0: 0 clocks Extended Additive Latency
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* EXT_WRREC [23]: 1: 16 clocks Extended last data to precharge minimum interval (tWR)
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* CNTL_ADJ [29-31]: 000: MODTn, MCSn_B, and MCKEn will be launched aligned with the other DRAM address and control signals.
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*/
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#define DDR_TIMING_CFG_3_VAL 0x114F1100 /* was 0x114C1000 */
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/* RWT [0-3]: 0000: 0 clocks: Read-to-write turnaround for same chip select.
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* WRT [4-7]: 0000: 0 clocks: Write-to-read turnaround for same chip select
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* RRT [8-11]: 0010: 2 clocks: Read-to-read turnaround for same chip select
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* WWT [12-15]: 0010: 2 clocks: Write-to-write turnaround for same chip select.
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* EXT_RWT [16-17]: 00: Extended read-to-write turnaround (tRTW)
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* EXT_WRT [19]: 0: Extended write-to-read turnaround
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* EXT_RRT [21]: 0: Extended read-to-read turnaround
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* EXT_WWT [23]: 0: Extended write-to-write turnaround
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* EXT_REFINT [27]: 0: Refresh interval (0=0,1=65,536 clocks)
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* DLL_LOCK [30-31]: 10: 1024 clocks: DDR SDRAM DLL Lock Time (0=200, 1=512, 2=1024 clocks)
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*/
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#define DDR_TIMING_CFG_4_VAL 0x00220002 /* was 0x00220001 */
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/* RODT_ON [3-7]: 0101: 4 clocks: Read to ODT on (0=CASLAT-WR_LAT, 1=0, 2=1, 12=11 clocks)
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* RODT_OFF [9-11]: 100: 4 clocks: Read to ODT off (0=4, 1=1, 7=7 clocks)
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* WODT_ON [15-19]: 00001: 1 clock: Write to ODT off (1=0, 2=1, 6=5 clocks)
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* WODT_OFF [21-23]: 100: 4 clocks: Write to ODT off (0=4, 1=1, 7=7 clocks)
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*/
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#define DDR_TIMING_CFG_5_VAL 0x05401400
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#define DDR_TIMING_CFG_6_VAL 0x00000000
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/* CKE_RST [2-3]: 00: 200 clocks: CKE reset time (tXPR) (0=200, 1=256, 2=512, 3=1024 clocks)
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* CKSRE [4-7]: 0000: 15 clocks: Valid clock after Self Refresh entry (tCKSRE) (0=15, 1=6, )
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* CKSRX [8-11]: 0000: 15 clocks: Valid clock after Self Refresh exit (tCKSRX)
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* PAR_LAT [12-15]: 0000: 0 clocks
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* CS_TO_CMD [24-27]: 0000: 0 clocks: Chip select to command latency
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*/
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#define DDR_TIMING_CFG_7_VAL 0x00000000 /* tried 0x00050000 */
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/* RWT_BG [0-3]: 0000: Read-to-write turnaround for same chip select and same bank group
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* WRT_BG [4-7]: 0011: Write-to-read turnaround for same chip select and same bank group
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* RRT_BG [8-11]: 0001: Read-to-read turnaround for same chip select and same bank group
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* WWT_BG [12-15]: 0001: Write-to-write turnaround for same chip select and same bank group
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* ACTTOACT_BG [16-19]: 0101: Activate-to-activate interval for the same bank group(tRRD_L).
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* WRTORD_BG [20-23]: 1000: Last write data pair to read command issue interval for the same bank group(tWTR_L)
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* PRE_ALL_REC [27-31]: 00000: Precharge all-to-activate interval
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*/
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#define DDR_TIMING_CFG_8_VAL 0x03115800
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/* MR1 | MR0
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* MR0 0x0215
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* | 11 | 10 | 9 | 8 | 7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
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* [ WR/RTP ] [ CL3-1 ][BT][CL0][ BL ]
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* Burst Length (BL) = 01: 00 (fixed 8), 01 (on the fly), 02 (fixed 4)
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* Burst Type (BT) = 0 (nibble sequential), 1 (interleave)
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* CAS Latency (CL):
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* 00000 (9 clocks)
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* 00001 (10 clocks)
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* 00010 (11 clocks)
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* 00011 (12 clocks) (original)
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* 00100 (13 clocks)
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* 00101 (14 clocks)
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* 00110 (15 clocks)
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* 00111 (16 clocks)
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* 10111 (32 clocks)
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* WRITE recovery (WR)/READ-to-PRECHARGE(RTP):
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* 0000 (10/5 clocks)
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* 0001 (12/6 clocks) (original)
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* 0010 (14/7 clocks)
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* 0011 (16/8 clocks)
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* 0100 (18/9 clocks)
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* 0101 (20/10 clocks)
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* 0110 (24/12 clocks)
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* 0111 (22/11 clocks)
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* 1000 (26/13 clocks)
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* 1001 (28/14 clocks)
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*
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* MR1 0x0101
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* | 11 | 10 | 9 | 8 | 7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
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* [TDQS][ RTT_NOM ][Wlev] [ AL ][ ODI ][DLL]
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* DLL=1, RTT_NOM=001 (RZQ/4 60ohm), ODI=00 (RZQ/7 34ohm)
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*/
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#define DDR_SDRAM_MODE_VAL 0x01010215
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/* MR2 | MR3
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* MR2
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* | 11 | 10 | 9 | 8 | 7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
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* [ RTT_WR ] [ CWL ]
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*
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* MR3
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* | 11 | 10 | 9 | 8 | 7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
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* [ WR_CMD_LAT]
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*/
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#define DDR_SDRAM_MODE_2_VAL 0x00000000
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#define DDR_SDRAM_MODE_9_VAL 0x00000500 /* Extended SDRAM mode 5 */
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#define DDR_SDRAM_MODE_10_VAL 0x04000000 /* Extended SDRAM mode 7 */
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/* Not applicable (reuse other MRs) */
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#define DDR_SDRAM_MODE_3_8_VAL 0x00000000
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/* MR4 | MR5
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* MR4: 0x0100
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* MR5: 0x013F: RTT_PARK=000 disabled, CA Parity Latency=010 (5 clocks) */
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#define DDR_SDRAM_MODE_9_VAL 0x00000500
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/* MR6 | MR7:
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* MR7: CCD_L 010=6 clocks, VREF Range 1 */
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#define DDR_SDRAM_MODE_10_VAL 0x04000000
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#define DDR_SDRAM_MD_CNTL_VAL 0x03001000
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#define DDR_SDRAM_CFG_VAL 0xE5200000 /* DDR4 w/ECC */
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/* ODT_CFG [9-10]: 10: Assert ODT to internal IOs only
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* NUM_PR [16-19]: 00001: 1 refresh
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* OBC_CFG [25]: 1: On-the-fly Burst Chop mode will be used
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* D_INIT [27]: 1: The memory controller will initialize memory once it is enabled
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*/
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#define DDR_SDRAM_CFG_2_VAL 0x00401050
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#define DDR_SDRAM_INTERVAL_VAL 0x18600618
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/* REF_MODE[22-23]: Refresh Mode */
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#define DDR_SDRAM_CFG_3_VAL 0x00000000
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/* REFINT [0-15]: 6240: Refresh interval 12480=0x30C0
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* BSTOPRE [18-31]: 1560: Precharge interval
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*/
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#define DDR_SDRAM_INTERVAL_VAL 0x18600000 /* was 0x18600618 */
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#define DDR_DATA_INIT_VAL 0xDEADBEEF
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#define DDR_SDRAM_CLK_CNTL_VAL 0x02400000
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/* CLK_ADJUST[5-9]: applied cycle after address/command
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* 00000 = aligned
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* 00001 = 1/16
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* 00100 = 1/4
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* 00110 = 3/8
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* 01001 = 9/16
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* 01000 = 1/2 (configured)
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* 01010 = 5/8
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* 10000 = 1
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*/
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#define DDR_SDRAM_CLK_CNTL_VAL 0x02000000 /* was 0x02400000 */
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/* ZQ_EN */
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#define DDR_ZQ_CNTL_VAL 0x8A090705
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/* WRLVL_EN [0]: 1: Write Leveling Enable
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* WRLVL_MRD [5-7]: 110 0x6: 64 clocks
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* WRLVL_ODTEN[9-11]: 111 0x7: 128 clocks ODT delay after margining mode is programmed (tWL_ODTEN).
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* WRLVL_DQSEN[13-15]: 101 0x5: 32 clocks DQS/DQS_B delay after margining mode is programmed (tWL_DQSEN).
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* WRLVL_SMPL [16-19]: 1111 0xF: 15 clocks Write leveling sample time
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* WRLVL_WLR [21-23]: 110 0x6: 64 clocks Write leveling repetition time.
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* WRLVL_START[27-31]: 1000 0x8: 3/4 clocks Write leveling start time for DQS[0].
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*/
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#define DDR_WRLVL_CNTL_VAL 0x8675F606
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/* WRLVL_START_1 [3-7]: 3/4 Write leveling start time for DQS[1]
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* WRLVL_START_2[11-15]: 7/8 Write leveling start time for DQS[2]
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* WRLVL_START_3[19-23]: 7/8 Write leveling start time for DQS[3]
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* WRLVL_START_4[27-31]: 9/8 Write leveling start time for DQS[4]
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*/
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#define DDR_WRLVL_CNTL_2_VAL 0x06070709
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/* WRLVL_START_5 [3-7]: 9/8 Write leveling start time for DQS[5]
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* WRLVL_START_6[11-15]: 9/8 Write leveling start time for DQS[6]
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* WRLVL_START_7[19-23]: 9/8 Write leveling start time for DQS[7]
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* WRLVL_START_8[27-31]: 1 Write leveling start time for DQS[8]
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*/
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#define DDR_WRLVL_CNTL_3_VAL 0x09090908
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#define DDR_SDRAM_RCW_1_VAL 0x00000000
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#define DDR_SDRAM_RCW_2_VAL 0x00000000
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#define DDR_DDRCDR_1_VAL 0x80080000
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/* DHC_EN[0]=1, ODT[12-13]=120 Ohms, VREF_OVRD 37% */
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#define DDR_DDRCDR_1_VAL 0x80000000 /* was 0x80080000 */
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#define DDR_DDRCDR_2_VAL 0x00000000
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#define DDR_ERR_INT_EN_VAL 0x0000001D
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@ -1153,10 +1345,12 @@ static void hal_ddr_init(void)
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set32(DDR_TIMING_CFG_2, DDR_TIMING_CFG_2_VAL);
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set32(DDR_TIMING_CFG_4, DDR_TIMING_CFG_4_VAL);
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set32(DDR_TIMING_CFG_5, DDR_TIMING_CFG_5_VAL);
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set32(DDR_TIMING_CFG_6, DDR_TIMING_CFG_6_VAL);
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set32(DDR_TIMING_CFG_7, DDR_TIMING_CFG_7_VAL);
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set32(DDR_TIMING_CFG_8, DDR_TIMING_CFG_8_VAL);
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set32(DDR_ZQ_CNTL, DDR_ZQ_CNTL_VAL);
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set32(DDR_SDRAM_CFG_3, 0);
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set32(DDR_SDRAM_CFG_3, DDR_SDRAM_CFG_3_VAL);
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/* DDR SDRAM mode configuration */
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set32(DDR_SDRAM_MODE, DDR_SDRAM_MODE_VAL);
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